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Production Magnetron Sputtering System —MSI-200
The production magnetron sputtering system is a high performance and high efficiency magnetron sputtering equipment developed for production enterprise laboratories and production lines. The MSI-200 magnetron sputtering equipment adopts a design of interconnecting multiple vacuum chambers. The transfer of wafers is achieved through a wafer vacuum transfer module. It can be paired with multiple deposition chambers or processing chambers, suitable for production or experimental lines.
Key word:
High-accuracy Magnetron Sputtering System, Film Deposition, Process Debugging, Software Development
Category:
Production Film Deposition Equipment
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Production Magnetron Sputtering System —MSI-200
Details
The production magnetron sputtering system is a high performance and high efficiency magnetron sputtering equipment developed for production enterprise laboratories and production lines. The MSI-200 magnetron sputtering equipment adopts a design of interconnecting multiple vacuum chambers. The transfer of wafers is achieved through a wafer vacuum transfer module. It can be paired with multiple deposition chambers or processing chambers, suitable for production or experimental lines.
Performance Parameters
| Wafer size | 8-12inch |
| Uniformity |
Better than±3% |
| Extreme vacuum |
Better than 5×10-9mbar（Process chamber） |
| Manipulator heating temperature | RT-800℃，Optional RT-1200℃ |
| PM | Pre-cleaning chamber, sputtering chamber, annealing chamber, cryogenic chamber, evaporation chamber, oxidation chamber, etc. |
| TM | Optional quadrilateral, hexagonal, or octagonal chambers, can interconnect multiple transfer chambers, equipped with dual or single arm robotics, calibration and measurement devices |
| Load lock | 8inch or 12inch, Optional front-end modules such as EFEM |
| Number of cathodes in the deposition chamber | Six to twelve 4-inch cathodes |
| Accuracy | 0.1nm |
Customer case1
Preparation: customer Sub/Ta/Mo/MgO style/CoFeB/Mo/CoFeB/MgO style/Mo multilayer films
Characterization diagram of magnetic metal/metal/magnetic metal forming antiferromagnetic coupling structure
Customer case2
The customer tested the uniformity of the 8inch wafer by depositing Ti film, placing 10cm*10cm silicon wafers at the center of the circle, 4 inch, 6 inch and 8inch respectively, and obtained the film thickness at seven locations, among which the optimal result was non-uniformity of 1.9%, which was well received by customers.(4-inch cathode sputtering 8-inch wafer, average film thickness of about 49nm, uniformity of 1.9%, the index is the current international leading level)
Homogeneity test characterization diagram
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